dc.contributor.authorLarrue, Alexandre
dc.contributor.authorWilhelm, Christophe
dc.contributor.authorVest, Gwenaelle
dc.contributor.authorCombrié, Sylvain
dc.contributor.authorAlfredo, De Rossi
dc.contributor.authorSoci, Cesare
dc.date.accessioned2013-02-19T03:58:40Z
dc.date.available2013-02-19T03:58:40Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationLarrue, A., Wilhelm, C., Vest, G., Combrié, S., Alfredo, D. R., & Soci, C. (2012). Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission. Optics Express, 20(7), 7758-7770.en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://hdl.handle.net/10220/9147
dc.description.abstractA novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10 3 cm−1) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesOptics Expressen_US
dc.rights© 2012 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OE.20.007758]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.titleMonolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emissionen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1364/OE.20.007758
dc.description.versionPublished versionen_US


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