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|Title:||Modeling of lateral charge transfer in Si nanocrystals in SiO2 thin film||Authors:||Yu, Q.
Yu, Y. F.
Wong, J. I.
|Issue Date:||2012||Source:||Yu, Q., Liu, Y., Chen, T., Yu, Y. F., Wong, J. I., & Yang, M. (2012). Modeling of lateral charge transfer in Si nanocrystals in SiO2 thin film. Journal of applied physics, 111(7).||Series/Report no.:||Journal of applied physics||Abstract:||In this work, lateral charge diffusion in Si nanocrystal (nc-Si) layer embedded in a SiO2 thin film has been simulated with Silvaco-TCAD tool by monitoring the influence of the charging of the nanocrystal in one metal-oxide-semiconductor structure on its neighboring devices. With the existence of the nc-Si layer in the spacing regions between the charged device and a neighboring device, a flatband voltage shift can be observed in the neighboring device after a charging operation on the charged device. The phenomena are explained in terms of the lateral charge diffusion in the nc-Si layer. The lateral charge diffusion can cause the interference among the neighboring devices.||URI:||https://hdl.handle.net/10356/95235
|ISSN:||0021-8979||DOI:||http://dx.doi.org/10.1063/1.3701577||Rights:||© 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3701577]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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