dc.contributor.authorTian, Yufeng
dc.contributor.authorLin, Weinan
dc.contributor.authorWu, Tom
dc.identifier.citationTian, Y., Lin, W., & Wu, T. (2012). Anisotropic magnetoresistance and weak spin-orbital coupling in doped ZnO thin films. Applied Physics Letters, 100(5), 052408-.en_US
dc.description.abstractBoth out-of-plane and in-plane anisotropic magnetoresistance (AMR) of Cu-doped ZnO thin films with different crystalline orientations are studied. Comparative data of angular dependent AMR suggest that the out-of-plane AMR comes from the geometric effect, while the in-plane AMR can be attributed to the field-dependent path-length effect. Moreover, the small magnitude of AMR and the negligible magnetocrystalline anisotropy suggest that the spin-orbit coupling in Cu-doped ZnO is relatively weak.en_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3681795]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.titleAnisotropic magnetoresistance and weak spin-orbital coupling in doped ZnO thin filmsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.description.versionPublished versionen_US

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