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|Title:||Effects of internal strain and external pressure on electronic structures and optical transitions of self-assembled InxGa1−xAs/GaAs quantum dots : an experimental and theoretical study||Authors:||Wen, Yuan
Xu, S. J.
|Issue Date:||2012||Source:||Wen, Y., Yang, M., Xu, S. J., Qin, L., & Shen, Z. (2012). Effects of internal strain and external pressure on electronic structures and optical transitions of self-assembled InxGa1−xAs/GaAs quantum dots : an experimental and theoretical study. Journal of Applied Physics, 112(1).||Series/Report no.:||Journal of Applied Physics||Abstract:||The optical emissive transitions from the ground and excited states of the self-assembled InxGa1−xAs/GaAs quantum dots (QDs) at room temperature were experimentally measured as a function of the external hydrostatic pressure by means of the confocal micro-photoluminescence technique. The ground state transition is very weak under zero external pressure and the photoluminescence is dominant by the excited state transition. However, the intensity of the ground state transition monotonically increases with increasing the external pressure and eventually become the dominant transition. Their pressure coefficients (PCs) were determined to be 6.8 and 7.1 meV/kbar, respectively, which were astonishingly smaller than those of GaAs bulk and the InGaAs/GaAs reference quantum well. The emission peak from the higher order excited states had a much smaller PC (∼0.5 meV/kbar). The influence of the built-in strain and external hydrostatic pressure on the electronic structures and optical transitions of various InxGa1−xAs/GaAs QDs was theoretically investigated by using the eight-band k·p method. Good agreement between the theoretical and experimental results was achieved, firmly revealing that the internal built-in strain in the dot system is mainly responsible for the experimental findings.||URI:||https://hdl.handle.net/10356/95222
|ISSN:||0021-8979||DOI:||10.1063/1.4730628||Rights:||© 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4730628]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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