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|Title:||A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces||Authors:||Wang, Huatao
|Issue Date:||2012||Source:||Wang, H., & Wu, T. (2012). A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces. Nanoscale Research Letters, 7(1), 110.||Series/Report no.:||Nanoscale research letters||Abstract:||Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orientation and growth parameters. Furthermore, micro-/nanoscale pits with controlled morphologies can also be successfully fabricated on Si and Ge surfaces by taking advantage of the sublimation of silicides/germanides. The aim of this brief report is to illustrate the concept of lithography-free synthesis and patterning on surfaces of elemental semiconductors, and the differences and the challenges associated with the Si and the Ge surfaces will be discussed. Our results suggest that this low-cost bottom-up approach is promising for applications in functional nanodevices.||URI:||https://hdl.handle.net/10356/99875
|ISSN:||1556-276X||DOI:||http://dx.doi.org/10.1186/1556-276X-7-110||Rights:||© 2012 The Authors.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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