dc.contributor.authorQin, H. L.
dc.contributor.authorGoh, K. E. J.
dc.contributor.authorTroadec, C.
dc.contributor.authorBosman, Michel
dc.contributor.authorPey, Kin Leong
dc.identifier.citationQin, H. L., Goh, K. E. J., Troadec, C., Bosman, M., & Pey, K. L. (2012). The electronic barrier height of silicon native oxides at different oxidation stages. Journal of applied physics, 111(5).en_US
dc.description.abstractA systematic study on silicon native oxides grown in ambient air at room temperature is carried out using ballistic electron emission microscopy. The electronic barrier height of Au/native oxide was directly measured for native oxides at different oxidation stages. While the ballistic electron transmission decreases with increasing oxidation time, the electronic barrier height remains the same, even after oxidation for 1 week. After oxidation for 26 months, the oxide layer showed the bulk-like SiO2 barrier; however, some local areas still show the same barrier height as that of an Au/n-Si device. This demonstrates the non-uniformity of native oxide growth.en_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3693556].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.titleThe electronic barrier height of silicon native oxides at different oxidation stagesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US

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