Phonon transport in nanowire with contacts : size and doping
Au Yeung, Tin Cheung
Kam, Chan Hin
Date of Issue2012
School of Electrical and Electronic Engineering
The phonon transport in Lennard-Jones silicon wire with contacts is investigated using non-equilibrium Green’s function. With the size decreasing, the significant reduction in the number of phonon modes leads to a smaller thermal conductance density. The dopant (Ge) atoms are used to substitute the atom in the wire to study the doping effect. For thin wire, its thermal conductance is very sensitive to the location of dopants. It is also found that the interior atom substitution has more impact on the thermal conductance over surface atom; substitution near contact surface reduces thermal conductance significantly; thermal conductance is suffering a 10%–20% variation due the random distribution of dopants; 17% of Ge content is sufficient to reduce thermal conductance by 80%.
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Journal of applied physics
© 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4709755]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.