Phononic and structural response to strain in wurtzite-gallium nitride nanowires
Loh, G. C.
Teo, Edwin Hang Tong
Tay, Beng Kang
Date of Issue2012
School of Electrical and Electronic Engineering
Gallium nitride (GaN) nanowires exist in a myriad of cross-sectional shapes. In this study, a series of classical molecular dynamics simulations is performed to investigate the strain-phononics-structure relationship in rectangular and triangular wurtzite-GaN nanowires. The thermal conductivity of the nanowires is linearly dependent on the uniaxial strain in both compressive and tensile regimes, and shows no significant dissimilitude for the same amount of strain exerted on the two types of nanowire. This is coherent with an analytical approach using the Boltzmann transport theory. However, the thermomechanical behaviour at the vertex regions shows palpable differences between the two subfamilies, relative to the non-vertex faceted regions, as the structural morphology is most disparate at the vertices. Furthermore, the degree of strain asymmetry is a strong determinant of the vibrational response and consequently thermal conductance.
Journal of applied physics
© 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4716476 ]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.