Large strain and high energy storage density in orthorhombic perovskite (Pb0.97La0.02)(Zr1−x−ySnxTiy)O3 antiferroelectric thin films
Mirshekarloo, Meysam Sharifzadeh
Date of Issue2010
School of Materials Science and Engineering
Antiferroelectric (Pb0.97La0.02)(Zr1−x−ySnxTiy)O3 (PLZST) thin films with orthorhombic perovskite structure were prepared on Si substrates by a chemical solution deposition process. A secondary pyrochlore phase, which was not detectable with x-ray diffraction, was revealed with transmission electron microscopy. The pyrochlore phase was effectively suppressed by the introduction of polyethylene glycol (PEG) in the precursor solution and applying PbO capping layer on the surface of the films. With the persistent and detrimental pyrochlore phase removed completely, our PLZST antiferroelectric thin films exhibited excellent electrical and electromechanical properties. A large energy storage density up to 13.7 J/cm3 was exhibited from the polarization measurement, and a strain of 0.49% under the clamping of the substrate was also achieved in the thin film with high Zr content.
Applied physics letters
© 2010 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3497193]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.