Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95231
Title: Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping
Authors: Dalapati, Goutam Kumar
Wong, Terence Kin Shun
Li, Yang
Chia, Ching Kean
Das, Anindita
Mahata, Chandreswar
Gao, Han
Chattopadhyay, Sanatan
Kumar, Manippady Krishna
Seng, Hwee Leng
Maiti, Chinmay Kumar
Chi, Dong Zhi
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Dalapati, G. K., Wong, T. K. S., Li, Y., Chia, C. K., Das, A., Mahata, C., et al. (2012). Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping. Nanoscale Research Letters, 7.
Series/Report no.: Nanoscale research letters
Abstract: Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).
URI: https://hdl.handle.net/10356/95231
http://hdl.handle.net/10220/9334
Rights: © 2012 The Authors.
metadata.item.grantfulltext: open
metadata.item.fulltext: With Fulltext
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