Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation
Zhang, Dao Hua
Chen, X. Z.
Jin, Y. J.
Li, J. H.
Liu, C. J.
Wee, A. T. S.
Date of Issue2012
School of Electrical and Electronic Engineering
We report bonding and diffusion behavior of nitrogen incorporated into InSb wafer by two-step implantation. Three nitrogen-containing regions, i.e., a surface accumulation region, a uniform region, and a tail region, were observed in the samples after post annealing. X-ray photoelectron spectroscopy measurements at different depths reveal that majority of the nitrogen forms In-N bonds in the uniform region but exists as interstitial defects in the tail region. The diffusion coefficients of nitrogen in InSb were obtained by fitting the modified Fick’s law with experimental data and the activation energy of 0.55 ± 0.04 eV extracted confirms the interstitial dominating diffusion of nitrogen in the InSb wafer.
DRNTU::Science::Chemistry::Analytical chemistry::Gas analysis
Applied physics letters
© 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4734507]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.