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Title: Preparation and characterization of ZnO microcantilever for nanoactuation
Authors: Wang, Peihong
Du, Hejun
Shen, Shengnan
Zhang, Mingsheng
Liu, Bo
Keywords: DRNTU::Engineering::Mechanical engineering::Assistive technology
Issue Date: 2012
Source: Wang, P., Du, H., Shen, S., Zhang, M., & Liu, B. (2012). Preparation and characterization of ZnO microcantilever for nanoactuation. Nanoscale Research Letters, 7.
Series/Report no.: Nanoscale research letters
Abstract: Zinc oxide [ZnO] thin films are deposited using a radiofrequency magnetron sputtering method under room temperature. Its crystalline quality, surface morphology, and composition purity are characterized by X-ray diffraction [XRD], atomic force microscopy [AFM], field-emission scanning electron microscopy [FE-SEM], and energy-dispersive X-ray spectroscopy [EDS]. XRD pattern of the ZnO thin film shows that it has a high c-axis-preferring orientation, which is confirmed by a FE-SEM cross-sectional image of the film. The EDS analysis indicates that only Zn and O elements are contained in the ZnO film. The AFM image shows that the film's surface is very smooth and dense, and the surface roughness is 5.899 nm. The microcantilever (Au/Ti/ZnO/Au/Ti/SiO2/Si) based on the ZnO thin film is fabricated by micromachining techniques. The dynamic characterizations of the cantilever using a laser Doppler vibrometer show that the amplitude of the cantilever tip is linear with the driving voltage, and the amplitude of this microcantilever's tip increased from 2.1 to 13.6 nm when the driving voltage increased from 0.05 to 0.3 Vrms. The calculated transverse piezoelectric constant d31 of the ZnO thin film is -3.27 pC/N. This d31 is high compared with other published results. This ZnO thin film will be used in smart slider in hard disk drives to do nanoactuation in the future.
ISSN: 1556-276X
DOI: 10.1186/1556-276X-7-176
Rights: © 2012 The Authors.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MAE Journal Articles

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