Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95566
Title: AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
Authors: Dolmanan, S. B.
Kajen, R. S.
Bera, L. K.
Teo, S. L.
Wang, W. Z.
Li, H.
Lee, D.
Han, S.
Tripathy, Sudhiranjan
Lin, Vivian Kaixin
Tan, Joyce Pei Ying
Kumar, M. Krishna
Arulkumaran, Subramaniam
Ng, Geok Ing
Vicknesh, Sahmuganathan
Todd, Shane
Lo, Guo-Qiang
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Issue Date: 2012
Source: Tripathy, S., Lin, V. K. X., Dolmanan, S. B., Tan, J. P. Y., Kajen, R. S., Bera, L. K., et al. (2012). AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111). Applied Physics Letters, 101(8), 082110-.
Series/Report no.: Applied physics letters
Abstract: This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111) substrate. The total nitride stack thickness of the sample grown by the metal-organic chemical vapor deposition technique is about 3.3 ± 0.1 μm. The structural and optical properties of these layers are studied by cross-sectional scanning transmission electron microscopy, high-resolution x-ray diffraction, photoluminescence, and micro-Raman spectroscopy techniques. The top AlGaN/GaN heterointerfaces reveal the formation of a two-dimensional electron gas with average Hall mobility values in the range of 1800 to 1900 cm2/Vs across such 200 mm diameter GaN on Si(111) samples. The fabricated 1.5 μm-gate AlGaN/GaN high-electron-mobility transistors exhibited the drain current density of 660 mA/mm and extrinsic transconductance of 210 mS/mm. These experimental results show immense potential of 200-mm diameter GaN-on-silicon technology for electronic device applications.
URI: https://hdl.handle.net/10356/95566
http://hdl.handle.net/10220/9346
ISSN: 0003-6951
DOI: http://dx.doi.org/10.1063/1.4746751
Rights: © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4746751]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
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