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      Electromechanical properties and fatigue of antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 thin film cantilevers fabricated by micromachining

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      6. Electromechanical properties and fatigue of antiferroelectric.pdf (810.1Kb)
      Author
      Mirshekarloo, Meysam Sharifzadeh
      Zhang, Lei
      Yao, Kui
      Sritharan, Thirumany
      Date of Issue
      2012
      School
      School of Materials Science and Engineering
      Version
      Accepted version
      Abstract
      Electromechanical cantilevers comprising antiferroelectric (Pb, La) (Zr, Sn, Ti)O3 (PLZST) thin films were fabricated through bulk micro-machining process on silicon wafers, and their electromechanical properties including strain-fatigue behaviors of the antiferroelectric thin film cantilevers were investigated. The antiferroelectric cantilevers showed the distinct digital actuation characteristics with the strain generated due to the antiferroelectric–ferroelectric transformation. The maximum displacement per unit voltage around the phase switching field reached 16.7 μm/V, significantly larger than the typical piezoelectric cantilevers. Moreover, the antiferroelectric PLZST cantilevers exhibited superior strain-fatigue resistance compared to the similar piezoelectric microstructures. These results show the promising future of antiferroelectric materials in micro electromechanical systems.
      Type
      Journal Article
      Series/Journal Title
      Sensors and Actuators A: Physical
      Rights
      © 2012 Elsevier B.V. This is the author created version of a work that has been peer reviewed and accepted for publication by Sensors and Actuators A: Physical, Elsevier B.V. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.sna.2012.08.024].
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      http://dx.doi.org/10.1016/j.sna.2012.08.024
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