dc.contributor.authorMirshekarloo, Meysam Sharifzadeh
dc.contributor.authorYao, Kui
dc.contributor.authorSritharan, Thirumany
dc.date.accessioned2013-03-13T08:19:34Z
dc.date.available2013-03-13T08:19:34Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationMirshekarloo, M. S., Yao, K., & Sritharan, T. (2012). Ferroelastic Strain Induced Antiferroelectric-Ferroelectric Phase Transformation in Multilayer Thin Film Structures. Advanced Functional Materials, 22(19), 4159-4164.en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://hdl.handle.net/10220/9398
dc.description.abstractCoupling effects among mechanical, electrical and magnetic parameters in thin film structures including ferroic thin films provide exciting opportunity for creating device functionalities. For thin films deposited on a substrate, their mechanical stress and microstructure are usually determined by the composition and processing of the films and the lattice and thermal mismatch with the substrate. Here it is found that the stress and structure of an antiferroelectric (Pb0.97,La0.02)(Zr0.90,Sn0.05,Ti0.05)O3 (PLZST) thin film are changed completely by a ferroelastic strain in a magnetic shape memory (MSM) alloy Ni-Mn-Ga (NMG) thin film on the top of the PLZST, despite the existence of the substrate constraint. The ferroelastic strain in the NMG film results in antiferroelectric (AFE) to ferroelectric (FE) phase transformation in the PLZST layer underneath. This finding indicates a different strategy to modulate the structure and function for multilayer thin films and to create unprecedented devices with ferroic thin films.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesAdvanced Functional Materialsen_US
dc.rights© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.titleFerroelastic strain induced antiferroelectric-ferroelectric phase transformation in multilayer thin film structuresen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1002/adfm.201200832


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