Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95157
Title: Ultrafast exciton dynamics and two-photon pumped lasing from ZnSe nanowires
Authors: Xing, Guichuan
Luo, Jingshan
Li, Hongxing
Wu, Bo
Liu, Xinfeng
Huan, Alfred Cheng Hon
Fan, Hong Jin
Sum, Tze Chien
Keywords: DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Issue Date: 2013
Source: Xing, G., Luo, J., Li, H., Wu, B., Liu, X., Huan, A. C. H., et al. (2013). Ultrafast Exciton Dynamics and Two-Photon Pumped Lasing from ZnSe Nanowires. Advanced Optical Materials, 1(4), 319-326.
Series/Report no.: Advanced optical materials
Abstract: The carrier recombination dynamics in ZnSe nanowires (NWs) remain poorly understood despite more than a decade of research since their inception in 2001. Herein, through a comprehensive pump fluence- and temperature-dependent two-photon excitation (TPE) study, a clear picture of the carrier relaxation pathways, intrinsic lifetimes, exciton oscillator strengths, and exciton-phonon interactions is presented for this NW system. Contrary to a common perception that the higher pump intensities needed to achieve two-photon-excited photoluminescence correspond to a higher exciton density threshold (nth) for two-photon pumped lasing, it is found that a much lower nth is needed to achieve lasing with TPE compared to single-photon excitation (SPE) of the same ZnSe NWs. This measurement is further supported by the greatly enhanced lasing action photostability characteristics of the ZnSe NWs under TPE. These findings have significant implications on the design and the tailoring of the optoelectronic properties of nanowire lasers.
URI: https://hdl.handle.net/10356/95157
http://hdl.handle.net/10220/9818
ISSN: 2195-1071
DOI: http://dx.doi.org/10.1002/adom.201200045
Rights: © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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