Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96545
Title: Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
Authors: Sun, Xiaowei
Zhang, Zi-Hui
Tan, Swee Tiam
Liu, Wei
Ju, Zhengang
Zheng, Ke
Kyaw, Zabu
Ji, Yun
Hasanov, Namig
Demir, Hilmi Volkan
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
Issue Date: 2013
Source: Zhang, Z. H., Tan, S. T., Liu, W., Ju, Z., Zheng, K., Kyaw, Z., et al. (2013). Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer. Optics Express, 21(4), 4958-4969.
Series/Report no.: Optics express
Abstract: This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.
URI: https://hdl.handle.net/10356/96545
http://hdl.handle.net/10220/9923
ISSN: 1094-4087
DOI: http://dx.doi.org/10.1364/OE.21.004958
Rights: © 2013 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: http://dx.doi.org/10.1364/OE.21.004958. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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