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|Title:||Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2||Authors:||Zahn, Dietrich R. T.
Steffen Michaelis de Vasconcellos
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2013||Source:||Tonndorf, P., Schmidt, R., Böttger, P., Zhang, X., Börner, J., Liebig, A., et al. (2013). Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2. Optics express, 21(4), 4908-4916.||Series/Report no.:||Optics express||Abstract:||We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.||URI:||https://hdl.handle.net/10356/96398
|ISSN:||1094-4087||DOI:||http://dx.doi.org/10.1364/OE.21.004908||Rights:||© 2013 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: http://dx.doi.org/10.1364/OE.21.004908. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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