Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells
Date of Issue2013
School of Electrical and Electronic Engineering
A ten-band k ∙p Hamiltonian for III-V-N dilute nitride semiconductor quantum wells (QWs) grown on the (11N)-oriented substrates is presented. The energy dispersion curves, optical transition matrix elements, internal piezoelectric field, and optical gain of InGaAsN/GaAs on the (110), (111), (113), and (11∞)-oriented substrates are investigated including band-anti-crossing, strain, and piezoelectric field effects. The band structures and optical gain are sensitive to the substrate orientation. The fundamental transition energy is the largest for the (111)-oriented QW and the smallest for (11∞)-oriented QW. The absolute values of internal piezoelectric field in the well and barrier layers reach the maximum for the (111)-QW, and zero for the (110) and (11∞)-oriented QWs. There exists an injection current density turning point. When the injection current density is below the turning point, the (111)-oriented QW has the largest peak gain. At the larger injection current density, the (11∞)-oriented QW has the largest peak gain.
DRNTU::Engineering::Electrical and electronic engineering
Journal of applied physics
© 2013 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4793279. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.