Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96393
Title: Charge transport in lightly reduced graphene oxide : a transport energy perspective
Authors: Kajen, R. S.
Pey, Kin Leong
Vijila, C.
Jaiswal, M.
Saravanan, S.
Ng, Andrew M. H.
Wong, C. P.
Loh, K. P.
Chandrasekhar, Natarajan
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Kajen, R. S., Chandrasekhar, N., Pey, K. L., Vijila, C., Jaiswal, M., Saravanan, S., et al. (2013). Charge transport in lightly reduced graphene oxide: A transport energy perspective. Journal of Applied Physics, 113(6).
Series/Report no.: Journal of applied physics
Abstract: Significant variation in the charge transport behaviour in graphene oxide (GO) ranging from Schottky to Poole-Frenkel and to space charge limited transport exists. These have been extensively reported in the literature. However, the validity of such conventional charge transport models meant for delocalized carriers, to study charge transport through localised states in GO, a disordered semiconductor is open to question. In this work, we use the concept of transport energy (TE) to model charge transport in lightly reduced GO (RGO) and demonstrate that the TE calculations match well with temperature dependent experimental I-V data on RGO. We report on a temperature dependent TE ranging from a few 10meV to 0.1 eV in slightly reduced GO. Last, we point out that, despite the success of several delocalised charge transport models in estimating barrier heights that resemble the TE level, they remain largely accidental and lack the insight in which the TE concept provides in understanding charge transport in RGO.
URI: https://hdl.handle.net/10356/96393
http://hdl.handle.net/10220/9932
ISSN: 00218979
DOI: http://dx.doi.org/10.1063/1.4792042
Rights: © 2013 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4792042. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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