dc.contributor.authorGao, Yuan
dc.contributor.authorAng, Diing Shenp
dc.contributor.authorBersuker, G.
dc.contributor.authorYoung, C. D.
dc.identifier.citationGao, Y., Ang, D. S., Bersuker, G., & Young, C. D. (2013). Electron Trap Transformation under Positive-Bias Temperature Stressing. IEEE Electron Device Letters, 34(3), 351-353.en_US
dc.description.abstractElectron detrapping in the TiN/HfO2 gate n-MOSFET under dynamic positive-bias temperature instability (PBTI) is examined. Similar to hole detrapping under dynamic negative-bias temperature instability (NBTI), electron detrapping per relaxation cycle is a constant under a low oxide stress field (~ 5.5 MV/cm), independent of the number of times the transistor is stressed and relaxed, and it progressively decreases with the number of stress/relaxation cycles at a higher oxide stress field (~7 MV/cm). Analysis shows that the decrease is due to a portion of the electron trap states being transformed into deeper levels, thereby increasing the emission time of the trapped electrons. However, unlike hole detrapping, the decrease in electron detrapping is not accompanied by a correlated increase in the stress-induced leakage current, and it can be reversed with a moderate negative gate voltage. These differences from NBTI suggest that distinct defects are active under PBTI.en_US
dc.relation.ispartofseriesIEEE electron device lettersen_US
dc.rights© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LED.2013.2242041].en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleElectron trap transformation under positive-bias temperature stressingen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionAccepted versionen_US

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