Design and array implementation a cantilever-based non-volatile memory utilizing vibrational reset

Abstract

This paper proposes a cantilever-based memory structure for storing binary data at extreme operating temperature (up to 300 C) in rugged electronics. The memory bit (0/1) is formed by opening/closing of an electrostatic switch. Permanent retention is obtained by adhesive force between two smooth surfaces in contact, eliminating leakage observed in all types of storage-layer-based NVMs. The Reset utilizes a train of short pulses to break the adhesion between the electrodes. This allows the Nano-electromechanical switch (NEMS) memory to be implemented using a simple bi-layer design and easily integrated with CMOS platforms. We propose an array structure where each memory cell consists of a NEMS memory device and one NMOS transistor for full random-access operation.