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Title: Design and array implementation a cantilever-based non-volatile memory utilizing vibrational reset
Authors: Gopal, Jayaraman Karthik
Chua, Geng Li
Singh, Pushpapraj
Kim, Tony Tae-Hyoung
Do, Anh Tuan
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric power
Issue Date: 2013
Source: Do, A. T., Gopal, J. K., Singh, P., Chua, G. L., & Kim, T. T.-H. (2013). Design and array implementation a cantilever-based non-volatile memory utilizing vibrational reset, IEEE European Solid-State Device Research Conference(ESSDERC), 284 - 287.
Abstract: This paper proposes a cantilever-based memory structure for storing binary data at extreme operating temperature (up to 300 C) in rugged electronics. The memory bit (0/1) is formed by opening/closing of an electrostatic switch. Permanent retention is obtained by adhesive force between two smooth surfaces in contact, eliminating leakage observed in all types of storage-layer-based NVMs. The Reset utilizes a train of short pulses to break the adhesion between the electrodes. This allows the Nano-electromechanical switch (NEMS) memory to be implemented using a simple bi-layer design and easily integrated with CMOS platforms. We propose an array structure where each memory cell consists of a NEMS memory device and one NMOS transistor for full random-access operation.
DOI: 10.1109/ESSDERC.2013.6818874
Rights: © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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