Please use this identifier to cite or link to this item:
Title: Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy
Authors: Duan, T. L.
Pan, J. S.
Ang, Diing Shenp
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Duan, T. L., Pan, J. S., & Ang, D. S. (2013). Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy. Applied Physics Letters, 102(20), 201604-.
Series/Report no.: Applied physics letters
Abstract: The interface region between Ga-face n-type GaN and Al2O3 dielectric (achieved via atomic-layer deposition or ALD) is investigated by X-ray photoelectron spectroscopy (XPS). An increase in the Ga-O to Ga-N bond intensity ratio following Al2O3 deposition implies that the growth of an interfacial gallium sub-oxide (GaOx) layer occurred during the ALD process. This finding may be ascribed to GaN oxidation, which may still happen following the reduction of a thin native GaOx by trimethylaluminum (TMA) in the initial TMA-only cycles. The valence band offset between GaN and Al2O3, obtained using both core-level and valence band spectra, is found to vary with the thickness of the deposited Al2O3. This observation may be explained by an upward energy band bending at the GaN surface (due to the spontaneous polarization induced negative bound charge on the Ga-face GaN) and the intrinsic limitation of the XPS method for band offset determination.
ISSN: 0003-6951
DOI: 10.1063/1.4807736
Rights: © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Files in This Item:
File Description SizeFormat 
23. Interfacial chemistry and valence band offset between GaN and Al 2O3.pdf1.08 MBAdobe PDFThumbnail

Citations 5

Updated on Jan 24, 2023

Web of ScienceTM
Citations 5

Updated on Jan 27, 2023

Page view(s) 10

Updated on Jan 27, 2023

Download(s) 10

Updated on Jan 27, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.