Please use this identifier to cite or link to this item:
|Title:||CMOS-MEMS capacitive sensors for intra-cranial pressure monitoring : sensor fabrication & system design||Authors:||George, Arup K.
Chan, Wai Pan
Narducci, Margarita Sofia
Kong, Zhi Hui
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||George, A. K., Chan, W. P., Narducci, M. S., Kong, Z. H., & Je, M. (2012). CMOS-MEMS capacitive sensors for intra-cranial pressure monitoring: Sensor fabrication & system design. 2012 International SoC Design Conference (ISOCC 2012).||Abstract:||Low-frequency variation of intracranial pressure (ICP) is a key indicator determining the successful outcome of a patient, subjected to traumatic brain injury (TBI). Post-trauma ICP increase can lead to fatal secondary injuries and hence continuous ICP monitoring would be an essential modality required in a neuro-monitoring system. This paper discusses the system design considerations of an integrated CMOS-MEMS sensor system for monitoring ICP in patients subjected to TBI. Design and fabrication steps of the on-chip CMOS-MEMS sensor are presented first. Interface circuit design challenges introduced by the low, not-well-controlled MEMS sensitivity and large offset due to the fabrication tolerance are discussed next. A review and comparison of the reported capacitive sensors and their interface circuits follows. The paper concludes discussing the biocompatible packaging of the system for in-vivo testing.||URI:||https://hdl.handle.net/10356/100181
|DOI:||10.1109/ISOCC.2012.6407119||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Conference Papers|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.