Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100241
Title: NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells
Authors: Lee, Zhao Chuan
Ho, Kim Ming
Kong, Zhi Hui
Kim, Tony Tae-Hyoung
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Lee, Z. C., Ho, K. M., Kong, Z. H., & Kim, T. T. (2012). NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells. 2012 International SoC Design Conference (ISOCC 2012).
Abstract: Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) are the two important reliability issues that degrade the SRAM cell stability over time. In this paper, we analyze the impact of NBTI and PBTI on 8T SRAM cells, and propose a stability improvement technique without using boosted supply voltage. In decoupled SRAM cells, the cell stability is limited by the stability of the half-selected cells, whose stability is significantly affected by NBTI and PBTI. The proposed technique lowers the WWL voltage to reduce the amount of disturbance and compensate the degraded cell stability. Lowering the WWL voltage doesn't affect the write margin substantially since the write margin is improved with NBTI and PBTI and the lowered WWL will produce a write margin similar to the original one.
URI: https://hdl.handle.net/10356/100241
http://hdl.handle.net/10220/13598
DOI: 10.1109/ISOCC.2012.6407074
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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