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dc.contributor.authorXu, S. J.en
dc.contributor.authorWang, X. C.en
dc.contributor.authorChua, S. J.en
dc.contributor.authorWang, C. H.en
dc.contributor.authorFan, Weijunen
dc.contributor.authorJiang, J.en
dc.contributor.authorXie, X. G.en
dc.identifier.citationXu, S. J., Wang, X. C., Chua, S. J., Wang, C. H., Fan, W., Jiang, J., & Xie, X. G. (1998). Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots. Applied Physics Letters, 72, 3335.en
dc.description.abstractPostgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dotsgrown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing of the luminescencelinewidth (from 78.9 to 20.5 meV) from the InAs dot layer occurs together with about 260 meV blueshift at annealing temperatures up to 850 °C. Observation of high-resolution transmission electron microscopy shows the existence of the dots under lower annealing temperatures but disappearance of the dotsannealed at 850 °C. The excited-state-filling experiments for the samples show that the luminescence of the samples annealed at 850 °C exhibits quantum well-like behavior. Comparing with the reference quantum well, we demonstrate significant enhancement of the interdiffusion in the dot layer.en
dc.relation.ispartofseriesApplied physics lettersen
dc.rights© 1998 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectElectrical and Electronic Engineeringen
dc.titleEffects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dotsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationInstitute of Materials Research and Engineering, National University of Singaporeen
dc.contributor.organizationMBE Technology Pte Ltd, Singaporeen
dc.description.versionPublished versionen
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