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Title: Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition
Authors: Utama, Muhammad Iqbal Bakti
Lu, Xin
Zhan, Da
Ha, Son Tung
Yuan, Yanwen
Shen, Zexiang
Xiong, Qihua
Keywords: DRNTU::Science::Physics
Issue Date: 2014
Source: Utama, M. I. B., Lu, X., Zhan, D., Ha, S. T., Yuan, Y., Shen, Z., et al. (2014). Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition. Nanoscale, 6(21), 12376-12382.
Series/Report no.: Nanoscale
Abstract: Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures.
DOI: 10.1039/C4NR03817G
Rights: © 2014 The Royal Society of Chemistry. This is the author created version of a work that has been peer reviewed and accepted for publication by Nanoscale, The Royal Society of Chemistry. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
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