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Title: Characteristics of InGaAs quantum dot infrared photodetectors
Authors: Xu, S. J.
Chua, S. J.
Mei, T.
Wang, X. C.
Zhang, X. H.
Karunasiri, G.
Fan, Weijun
Wang, C. H.
Jiang, J.
Wang, S.
Xie, X. G.
Keywords: Electrical and Electronic Engineering
Issue Date: 1998
Source: Xu, S. J., Chua, S. J., Mei, T., Wang, X. C., Zhang, X. H., Karunasiri, G., Fan, W., Wang, C. H., Jiang, J., Wang, S., & Xie, X. G. (1998). Characteristics of InGaAs quantum dot infrared photodetectors. Applied Physics Letters, 73(21), 3153.
Series/Report no.: Applied physics letters
Abstract: A quantum dot infrared photodetector(QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-opticcharacteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength.
ISSN: 0003-6951
DOI: 10.1063/1.122703
Schools: School of Electrical and Electronic Engineering 
Organisations: Institute of Materials Research and Engineering, National University of Singapore
MBE Technology Pte Ltd., Singapore
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore
Rights: © 1998 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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