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Title: X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
Authors: Xu, S. J.
Wang, H.
Li, Q.
Xie, M. H.
Wang, X. C.
Fan, Weijun
Feng, S. L.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2000
Source: Xu, S. J., Wang, H., Li, Q., Xie, M. H., Wang, X. C., Fan, W., & Feng, S. L. (2000). X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices. Applied physics letters, 77(14), 2130.
Series/Report no.: Applied physics letters
Abstract: We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measuredx-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlatticesannealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In–Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated.
ISSN: 0003-6951
DOI: 10.1063/1.1314298
Rights: © 2000 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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