Please use this identifier to cite or link to this item:
Title: Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
Authors: Anand, M. J.
Ng, G. I.
Vicknesh, S.
Arulkumaran, Subramaniam
Ranjan, K.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric power
Issue Date: 2013
Source: Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, S., & Ranjan, K. (2013). Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack. Physica status solidi (c), 10(11), 1421-1425.
Series/Report no.: Physica status solidi (c)
Abstract: We have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. The fabricated MISHEMT exhibited an IDmaxof >1000 mA/mm and gmmax of 241 mS/mm. Compared to conventional AlGaN/GaN HEMTs, about an order of magnitude lower gate leakage current and a ∼ 60% reduction in drain current (ID) collapse was observed in the MISHEMTs. The observation of low ID collapse is due to the occurrence of low interface state density (6.39 × 1010 eV-1 cm-2) between the bilayer dielectric (SiN/Al2O3) and GaN surface which is confirmed through the AC-conductance method.
ISSN: 1862-6351
DOI: 10.1002/pssc.201300219
Rights: © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
NTC Journal Articles
TL Journal Articles

Citations 20

Updated on Jan 16, 2023

Web of ScienceTM
Citations 20

Updated on Jan 23, 2023

Page view(s) 5

Updated on Jan 27, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.