Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100484
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dc.contributor.authorAnand, M. J.en
dc.contributor.authorNg, G. I.en
dc.contributor.authorVicknesh, S.en
dc.contributor.authorArulkumaran, Subramaniamen
dc.contributor.authorRanjan, K.en
dc.date.accessioned2014-10-24T07:29:23Zen
dc.date.accessioned2019-12-06T20:23:18Z-
dc.date.available2014-10-24T07:29:23Zen
dc.date.available2019-12-06T20:23:18Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationAnand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, S., & Ranjan, K. (2013). Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack. Physica status solidi (c), 10(11), 1421-1425.en
dc.identifier.issn1862-6351en
dc.identifier.urihttps://hdl.handle.net/10356/100484-
dc.description.abstractWe have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. The fabricated MISHEMT exhibited an IDmaxof >1000 mA/mm and gmmax of 241 mS/mm. Compared to conventional AlGaN/GaN HEMTs, about an order of magnitude lower gate leakage current and a ∼ 60% reduction in drain current (ID) collapse was observed in the MISHEMTs. The observation of low ID collapse is due to the occurrence of low interface state density (6.39 × 1010 eV-1 cm-2) between the bilayer dielectric (SiN/Al2O3) and GaN surface which is confirmed through the AC-conductance method.en
dc.language.isoenen
dc.relation.ispartofseriesPhysica status solidi (c)en
dc.rights© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electric poweren
dc.titleReduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stacken
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchResearch Techno Plazaen
dc.contributor.researchTemasek Laboratoriesen
dc.identifier.doi10.1002/pssc.201300219en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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