Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100489
Title: Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack
Authors: Arulkumaran, Subramaniam
Ng, Geok Ing
Vicknesh, Sahmuganathan
Wang, Hong
Ang, Kian Siong
Kumar, Chandramohan Manoj
Teo, Khoon Leng
Ranjan, Kumud
Keywords: DRNTU::Science::Physics
Issue Date: 2013
Source: Arulkumaran, S., Ng, G. I., Vicknesh, S., Wang, H., Ang, K. S., Kumar, C. M., et al. (2013). Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack. Applied physics express, 6(1), 016501-.
Series/Report no.: Applied physics express
Abstract: We have demonstrated 0.15-µm-gate-length AlGaN/GaN high-electron-mobility transistors (HEMTs) with direct-current (DC) and microwave performances for the first time using a complementary metal–oxide–semiconductor (CMOS)-compatible non-gold metal stack. Si/Ta-based ohmic contact exhibited low contact resistance (Rc=0.24 Ω.mm) with smooth surface morphology. The fabricated GaN HEMTs exhibited gmmax=250 mS/mm, fT/fmax=39/39 GHz, B Vgd=90 V, and drain current collapse <10%. The device Johnson's figure of merit (J-FOM = fT × B Vgd) is in the range between 3.51 to 3.83 THz.V which are comparable to those of other reported GaN HEMTs on Si with a conventional III–V gold-based ohmic contact process. Our results demonstrate the feasibility of realizing high-performance submicron GaN-on-silicon HEMTs using a Si CMOS-compatible metal stack.
URI: https://hdl.handle.net/10356/100489
http://hdl.handle.net/10220/25701
DOI: 10.7567/APEX.6.016501
Rights: © 2013 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Applied Physics Express, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.7567/APEX.6.016501].
Fulltext Permission: open
Fulltext Availability: With Fulltext
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