Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100489
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dc.contributor.authorArulkumaran, Subramaniamen
dc.contributor.authorNg, Geok Ingen
dc.contributor.authorVicknesh, Sahmuganathanen
dc.contributor.authorWang, Hongen
dc.contributor.authorAng, Kian Siongen
dc.contributor.authorKumar, Chandramohan Manojen
dc.contributor.authorTeo, Khoon Lengen
dc.contributor.authorRanjan, Kumuden
dc.date.accessioned2015-05-29T01:49:17Zen
dc.date.accessioned2019-12-06T20:23:24Z-
dc.date.available2015-05-29T01:49:17Zen
dc.date.available2019-12-06T20:23:24Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationArulkumaran, S., Ng, G. I., Vicknesh, S., Wang, H., Ang, K. S., Kumar, C. M., et al. (2013). Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack. Applied physics express, 6(1), 016501-.en
dc.identifier.urihttps://hdl.handle.net/10356/100489-
dc.description.abstractWe have demonstrated 0.15-µm-gate-length AlGaN/GaN high-electron-mobility transistors (HEMTs) with direct-current (DC) and microwave performances for the first time using a complementary metal–oxide–semiconductor (CMOS)-compatible non-gold metal stack. Si/Ta-based ohmic contact exhibited low contact resistance (Rc=0.24 Ω.mm) with smooth surface morphology. The fabricated GaN HEMTs exhibited gmmax=250 mS/mm, fT/fmax=39/39 GHz, B Vgd=90 V, and drain current collapse <10%. The device Johnson's figure of merit (J-FOM = fT × B Vgd) is in the range between 3.51 to 3.83 THz.V which are comparable to those of other reported GaN HEMTs on Si with a conventional III–V gold-based ohmic contact process. Our results demonstrate the feasibility of realizing high-performance submicron GaN-on-silicon HEMTs using a Si CMOS-compatible metal stack.en
dc.format.extent12 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied physics expressen
dc.rights© 2013 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Applied Physics Express, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.7567/APEX.6.016501].en
dc.subjectDRNTU::Science::Physicsen
dc.titleDemonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stacken
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchTemasek Laboratoriesen
dc.identifier.doi10.7567/APEX.6.016501en
dc.description.versionAccepted versionen
item.grantfulltextopen-
item.fulltextWith Fulltext-
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