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|Title:||Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy||Authors:||Loke, Wan Khai
Yoon, Soon Fatt
Ng, T. K.
Wang, S. Z.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2002||Source:||Loke, W. K., Yoon, S. F., Ng, T. K., Wang, S. Z., & Fan, W. (2002). Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 20(5), 2091.||Series/Report no.:||Journal of vacuum science & technology B: microelectronics and nanometer structures||Abstract:||We present the effect of nitrogen (N) and indium (In) incorporation on the structural and optical properties of with low lattice mismatch to GaAs grown by solid-source molecular beam epitaxy using a radio frequency (rf) nitrogen plasma source. The results show that excessive introduction of nitrogen during the growth of GaInNAs may lead to greater incorporation of interstitial nitrogen and degradation in crystal quality. This effect is more significant in GaInNAs compared to GaNAs. A drastic 6× increase in x-ray diffraction full width at half maximum (XRD-FWHM) was observed in GaInNAs compared to 1.5× increase of the same in GaNAs when reactive nitrogen is introduced into the material. The more significant degradation in GaInNAs quality is believed to be due to greater incorporation of interstitial nitrogen in the presence of indium during growth. By changing the In content and fixing the N incorporation rate, a sample of with relatively low lattice mismatch of −896 ppm (or was grown. Low temperature (4 K) photoluminescence emission at 1518 nm was observed and XRD-FWHM of 118.2 arcsec was measured||URI:||https://hdl.handle.net/10356/100502
|ISSN:||0734-211X||DOI:||10.1116/1.1508818||Rights:||© 2002 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1116/1.1508818]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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