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dc.contributor.authorIlyas, Usmanen
dc.contributor.authorRawat, Rajdeep Singhen
dc.contributor.authorWang, Y.en
dc.contributor.authorTan, T. L.en
dc.contributor.authorLee, P.en
dc.contributor.authorChen, P.en
dc.contributor.authorSun, Handongen
dc.contributor.authorLi, Fengjien
dc.contributor.authorZhang, Samen
dc.identifier.citationIlyasa, U., Rawat, R. S., Wang, Y., Tan, T. L., Lee, P., Chen, P., et al. (2012). Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films. Applied surface science, 258(17), 6373–6378.en
dc.description.abstractThe un-doped and Mn doped ZnO thin films, with oxygen rich stoichiometry, were deposited onto Si (1 0 0) substrate using spin coating technique. The structural analysis revealed the hexagonal wurtzite structure without any impurity phase formation. A consistent increase in cell volume with the increase in Mn doping concentration confirmed the successful incorporation of bigger sized tetrahedral Mn2+ ions (0.83 Å) in ZnO host matrix that was also endorsed by the presence of Mn 2p3/2 core level XPS spectroscopic peak. Extended deep level emission (DLE) spectra centered at ∼627 nm confirmed the presence of oxygen interstitials. Moreover, the magnetic measurements of field dependent M–H curves revealed the origin of ferromagnetic ordering from Mn-defect pair exchange coupling with oxygen interstitials in ZnO host matrix.en
dc.relation.ispartofseriesApplied surface scienceen
dc.rights© 2012 Elsevier B.V.en
dc.titleAlteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin filmsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.contributor.schoolNational Institute of Educationen
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