Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100524
Title: Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films
Authors: Ilyas, Usman
Rawat, Rajdeep Singh
Wang, Y.
Tan, T. L.
Lee, P.
Chen, P.
Sun, Handong
Li, Fengji
Zhang, Sam
Issue Date: 2012
Source: Ilyasa, U., Rawat, R. S., Wang, Y., Tan, T. L., Lee, P., Chen, P., et al. (2012). Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films. Applied surface science, 258(17), 6373–6378.
Series/Report no.: Applied surface science
Abstract: The un-doped and Mn doped ZnO thin films, with oxygen rich stoichiometry, were deposited onto Si (1 0 0) substrate using spin coating technique. The structural analysis revealed the hexagonal wurtzite structure without any impurity phase formation. A consistent increase in cell volume with the increase in Mn doping concentration confirmed the successful incorporation of bigger sized tetrahedral Mn2+ ions (0.83 Å) in ZnO host matrix that was also endorsed by the presence of Mn 2p3/2 core level XPS spectroscopic peak. Extended deep level emission (DLE) spectra centered at ∼627 nm confirmed the presence of oxygen interstitials. Moreover, the magnetic measurements of field dependent M–H curves revealed the origin of ferromagnetic ordering from Mn-defect pair exchange coupling with oxygen interstitials in ZnO host matrix.
URI: https://hdl.handle.net/10356/100524
http://hdl.handle.net/10220/11034
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2012.03.043
Rights: © 2012 Elsevier B.V.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MAE Journal Articles

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