Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100603
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dc.contributor.authorDang, Y. X.en
dc.contributor.authorFan, Weijunen
dc.contributor.authorLu, F.en
dc.contributor.authorWang, H.en
dc.contributor.authorZhang, Dao Huaen
dc.contributor.authorYoon, Soon Fatten
dc.date.accessioned2013-11-29T03:16:51Zen
dc.date.accessioned2019-12-06T20:25:14Z-
dc.date.available2013-11-29T03:16:51Zen
dc.date.available2019-12-06T20:25:14Z-
dc.date.copyright2006en
dc.date.issued2006en
dc.identifier.citationDang, Y. X., Fan, W., Lu, F., Wang, H., Zhang, D. H., & Yoon, S. F. (2006). Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells. Journal of applied physics, 99(7), 076108.en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/100603-
dc.description.abstractWe investigated the influence of thermal interdiffusion on the band structures of Si1−xGex /Si single quantum wells SQWs with a well width of 125 Å and Ge concentration x=0.3. Rapid thermal annealing with the temperatures of 750 and 800 °C leads to substantial interdiffusion indicated by a significant photoluminescence PL blueshift as large as 46 meV. The effect is modeled by a Si–Ge atomic interdiffusion at the heterointerface. The band structures and optical transitions of QW after interdiffusion were calculated based on an error function distribution and the 6+2-band k· p method. The diffusion lengths of the intermixing process are deduced from the PL shift. The thermal dependence of the interdiffusion coefficients follows the Arrhenius law. An activation energy Ea for interdiffusion of 2.75 eV is obtained. Our investigation indicates that the 6+2-band k· p formalism is valid for interdiffused Si1−xGex/Si QWs.en
dc.format.extent3 p.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of applied physicsen
dc.rights© 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.2186983].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleStudy of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wellsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1063/1.2186983en
dc.description.versionPublished versionen
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