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Title: Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
Authors: Yang, H. Y.
Han, Z. J.
Ostrikov, K.
Goh, Eunice S. M.
Chen, Tupei
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2012
Source: Goh, E. S. M., Yang, H. Y., Han, Z. J., Chen, T., & Ostrikov, K. (2012). Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes. Applied physics letters, 101(26), 263506-.
Series/Report no.: Applied physics letters
Abstract: Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes(LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.
ISSN: 0003-6951
DOI: 10.1063/1.4773367
Rights: © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: .  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law."
Fulltext Permission: open
Fulltext Availability: With Fulltext
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