Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100681
Title: Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells
Authors: Fan, Weijun
Ng, S. T.
Yoon, Soon Fatt
Li, M. F.
Chong, T. C.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2003
Source: Fan, W., Ng, S. T., Yoon, S. F., Li, M. F., & Chong, T. C. (2003). Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells. Journal of applied physics, 93(9), 5836.
Series/Report no.: Journal of applied physics
Abstract: The band structures, optical gain spectra, and transparency radiative current densities of compressive-strained GaInNAs quantum wells(QWs) with different tensile-strained GaAsN (N composition from 0 to 3%) barriers are systematically investigated using a modified 6x6 k.p Hamiltonian including the heavy hole, light hole, and spin-orbit splitting bands. We found that the transition energy decreases when increasing the N composition in the barrier. The optical gain spectra and maximum optical gain as a function of carrier density and radiative current density are obtained for the GaInNAs/GaAsN QWs with well width of 5 nm, Inw = 28%, and Nw= 2.66% emitting around 1.55 μm. The transparency carrier density increases with the nitrogen composition in the GaAsN barrier. The transparency radiative current density decreases with more nitrogen being added into the barrier, which is in agreement with the recent experimental observation.
URI: https://hdl.handle.net/10356/100681
http://hdl.handle.net/10220/18013
ISSN: 0021-8979
DOI: 10.1063/1.1566469
Schools: School of Electrical and Electronic Engineering 
Organisations: Department of Electrical and Computer Engineering, National University of Singapore
Rights: © 2003 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1566469].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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