Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100681
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dc.contributor.authorFan, Weijunen
dc.contributor.authorNg, S. T.en
dc.contributor.authorYoon, Soon Fatten
dc.contributor.authorLi, M. F.en
dc.contributor.authorChong, T. C.en
dc.date.accessioned2013-12-04T03:54:47Zen
dc.date.accessioned2019-12-06T20:26:31Z-
dc.date.available2013-12-04T03:54:47Zen
dc.date.available2019-12-06T20:26:31Z-
dc.date.copyright2003en
dc.date.issued2003en
dc.identifier.citationFan, W., Ng, S. T., Yoon, S. F., Li, M. F., & Chong, T. C. (2003). Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells. Journal of applied physics, 93(9), 5836.en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/100681-
dc.identifier.urihttp://hdl.handle.net/10220/18013en
dc.description.abstractThe band structures, optical gain spectra, and transparency radiative current densities of compressive-strained GaInNAs quantum wells(QWs) with different tensile-strained GaAsN (N composition from 0 to 3%) barriers are systematically investigated using a modified 6x6 k.p Hamiltonian including the heavy hole, light hole, and spin-orbit splitting bands. We found that the transition energy decreases when increasing the N composition in the barrier. The optical gain spectra and maximum optical gain as a function of carrier density and radiative current density are obtained for the GaInNAs/GaAsN QWs with well width of 5 nm, Inw = 28%, and Nw= 2.66% emitting around 1.55 μm. The transparency carrier density increases with the nitrogen composition in the GaAsN barrier. The transparency radiative current density decreases with more nitrogen being added into the barrier, which is in agreement with the recent experimental observation.en
dc.format.extent3 p.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of applied physicsen
dc.rights© 2003 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1566469].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleEffects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wellsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationDepartment of Electrical and Computer Engineering, National University of Singaporeen
dc.identifier.doi10.1063/1.1566469en
dc.description.versionPublished versionen
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