Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100690
Title: Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells
Authors: Li, M. F.
Chong, T. C.
Fan, Weijun
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 1996
Source: Fan, W., Li, M. F., Chong, T. C., & Xia, J. B. (1996). Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells. Journal of applied physics, 80(6), 3471.
Series/Report no.: Journal of applied physics
Abstract: The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc‐blende GaN/Ga0.85Al0.15N strained quantum well (100 Å well width) have been investigated using a 6×6 Hamiltonian model including the heavy hole, light hole, and spin‐orbit split‐off bands. At the k=0 point, it is found that the light hole strongly couples with the spin‐orbit split‐off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin‐orbit split‐off hole. Optical transitions between the valence subbands and the conduction subbands obey the Δn=0 selection rule. At the k≠0 points, there is strong band mixing among the heavy hole, light hole, and spin‐orbit split‐off hole. The optical transitions do not obey the Δn=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 1019 cm−3, there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5×1018 cm−3, which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J rad is 0.53 kA/cm2 for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors.
URI: https://hdl.handle.net/10356/100690
http://hdl.handle.net/10220/18007
ISSN: 1089-7550
DOI: 10.1063/1.363217
Rights: © 1996 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.363217].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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