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Title: Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
Authors: Fan, Weijun
Yoon, Soon Fatt
Wang, S. Z.
Liu, H. C.
Zhang, Dao Hua
Liu, W.
Sun, L.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2006
Source: Zhang, D. H., Liu, W., Sun, L., Fan, W., Yoon, S. F., Wang, S. Z.,& Liu, H. C. (2006). Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells. Journal of applied physics, 99, 043514.
Series/Report no.: Journal of applied physics
Abstract: We report observation of transverse electric TE dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in narrow quantum wells, the ground state is pushed up, which enhances the interaction with nitrogen state and significantly changes the nature of the state.
ISSN: 0021-8979
DOI: 10.1063/1.2172719
Schools: School of Electrical and Electronic Engineering 
Organisations: Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario
Rights: © 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI:  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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