Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100807
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dc.contributor.authorDang, Y. X.en
dc.contributor.authorFan, Weijunen
dc.contributor.authorNg, S. T.en
dc.contributor.authorWicaksono, Satrioen
dc.contributor.authorYoon, Soon Fatten
dc.contributor.authorZhang, Dao Huaen
dc.date.accessioned2013-12-04T02:16:58Zen
dc.date.accessioned2019-12-06T20:28:39Z-
dc.date.available2013-12-04T02:16:58Zen
dc.date.available2019-12-06T20:28:39Z-
dc.date.copyright2005en
dc.date.issued2005en
dc.identifier.citationDang, Y. X., Fan, W., Ng, S. T., Wicaksono, S., Yoon, S. F., & Zhang, D. H. (2005). Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method. Journal of applied physics, 98(2), 026102.en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/100807-
dc.description.abstractThe effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum wells QWs grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650–750 °C, respectively. Low-temperature (4K) PL peaks shift to higher energies with the annealing temperatures. An As–Sb atomic interdiffusion at the heterointerface is proposed to model this effect. The compositional profile of the QW after interdiffusion is described by an error function distribution and calculated by a ten-band k· p method. The estimated interdiffusion constants D are ~10−17–10−16 cm2 / s in the above temperature range and an activation energy of 1±0.4 eV is obtained.en
dc.format.extent3 p.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of applied physicsen
dc.rights© 2005 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1954886].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleStudy of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p methoden
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1063/1.1954886en
dc.description.versionPublished versionen
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