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Title: Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method
Authors: Dang, Y. X.
Fan, Weijun
Ng, S. T.
Wicaksono, Satrio
Yoon, Soon Fatt
Zhang, Dao Hua
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2005
Source: Dang, Y. X., Fan, W., Ng, S. T., Wicaksono, S., Yoon, S. F., & Zhang, D. H. (2005). Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method. Journal of applied physics, 98(2), 026102.
Series/Report no.: Journal of applied physics
Abstract: The effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum wells QWs grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650–750 °C, respectively. Low-temperature (4K) PL peaks shift to higher energies with the annealing temperatures. An As–Sb atomic interdiffusion at the heterointerface is proposed to model this effect. The compositional profile of the QW after interdiffusion is described by an error function distribution and calculated by a ten-band k· p method. The estimated interdiffusion constants D are ~10−17–10−16 cm2 / s in the above temperature range and an activation energy of 1±0.4 eV is obtained.
ISSN: 0021-8979
DOI: 10.1063/1.1954886
Rights: © 2005 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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