Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100808
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dc.contributor.authorLiu, W.en
dc.contributor.authorHou, X. Y.en
dc.contributor.authorJiang, Z. M.en
dc.contributor.authorZhang, Dao Huaen
dc.contributor.authorFan, Weijunen
dc.date.accessioned2013-12-09T01:27:59Zen
dc.date.accessioned2019-12-06T20:28:41Z-
dc.date.available2013-12-09T01:27:59Zen
dc.date.available2019-12-06T20:28:41Z-
dc.date.copyright2008en
dc.date.issued2008en
dc.identifier.citationLiu, W., Zhang, D. H., Fan, W., Hou, X. Y.,& Jiang, Z. M. (2008). Intersubband transitions in InGaAsN/GaAs quantum wells. Journal of applied physics, 104, 053119.en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/100808-
dc.description.abstractThe dependences of intersubband transitions on well width and nitrogen N content in n-type In0.23Ga0.77As1−xNx /GaAs quantum wells QWs are investigated using a ten-band k·p model. The absorption peak energy is found to increase first with the well width starting from 2 nm. It becomes insensitive from about 2.5 to 4.5 nm although the absorption intensity increases and bandwidth decreases monotonically, and then keeps decreasing with the well width beyond 4.5 nm. The peak energy is much larger than that of the N-free structure for narrower wells, but the difference decreases quickly with increasing well width. In the case of wider wells, the absorption peak energy shows relatively slow monotonic increase with increasing N content up to 3% because of the N-band and conduction-band coupling. In the nearly lattice-matched GaAsN/AlGaAs QWs the absorption peak energy shows a redshift with increasing N content from 0% to 0.4% and then increases gradually. The theoretical results are consistent with the reported experimental data.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of applied physicsen
dc.rights© 2008 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2976335.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleIntersubband transitions in InGaAsN/GaAs quantum wellsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationDepartment of Physics, Fudan University, People’s Republic of Chinaen
dc.identifier.doi10.1063/1.2976335en
item.grantfulltextopen-
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