Please use this identifier to cite or link to this item:
|Title:||Intersubband transitions in InGaAsN/GaAs quantum wells||Authors:||Liu, W.
Hou, X. Y.
Jiang, Z. M.
Zhang, Dao Hua
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2008||Source:||Liu, W., Zhang, D. H., Fan, W., Hou, X. Y.,& Jiang, Z. M. (2008). Intersubband transitions in InGaAsN/GaAs quantum wells. Journal of applied physics, 104, 053119.||Series/Report no.:||Journal of applied physics||Abstract:||The dependences of intersubband transitions on well width and nitrogen N content in n-type In0.23Ga0.77As1−xNx /GaAs quantum wells QWs are investigated using a ten-band k·p model. The absorption peak energy is found to increase first with the well width starting from 2 nm. It becomes insensitive from about 2.5 to 4.5 nm although the absorption intensity increases and bandwidth decreases monotonically, and then keeps decreasing with the well width beyond 4.5 nm. The peak energy is much larger than that of the N-free structure for narrower wells, but the difference decreases quickly with increasing well width. In the case of wider wells, the absorption peak energy shows relatively slow monotonic increase with increasing N content up to 3% because of the N-band and conduction-band coupling. In the nearly lattice-matched GaAsN/AlGaAs QWs the absorption peak energy shows a redshift with increasing N content from 0% to 0.4% and then increases gradually. The theoretical results are consistent with the reported experimental data.||URI:||https://hdl.handle.net/10356/100808
|ISSN:||0021-8979||DOI:||10.1063/1.2976335||Rights:||© 2008 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2976335. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
Files in This Item:
|Intersubband transitions in InGaAsNGaAs quantum wells.pdf||743.75 kB||Adobe PDF|
Updated on Dec 28, 2021
Updated on Mar 6, 2021
Page view(s) 50447
Updated on Aug 16, 2022
Updated on Aug 16, 2022
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.