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|Title:||Interdiffusion in narrow InGaAsN∕GaAs quantum wells||Authors:||Liu, W.
Zhang, Dao Hua
Huang, Z. M.
Wang, S. Z.
Yoon, Soon Fatt
Liu, C. J.
Wee, A. T. S.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2007||Source:||Liu, W., Zhang, D. H., Huang, Z. M., Wang, S. Z., Yoon, S. F., Fan, W., Liu, C. J., & Wee, A. T. S. (2007). Interdiffusion in narrow InGaAsN∕GaAs quantum wells. Journal of applied physics, 101, 103111.||Series/Report no.:||Journal of applied physics||Abstract:||Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In–Ga and N–As interdiffusions played key roles for the large blueshifts. The significant In–Ga interdiffusion occurred at 650 °C while the N diffusion occurred at a temperature above 700 °C. The theoretical results are in good agreement with the experimental observations.||URI:||https://hdl.handle.net/10356/100809
|ISSN:||0021-8979||DOI:||10.1063/1.2736943||Rights:||© 2007 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2736943. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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