Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100822
Title: Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots
Authors: Fan, Weijun
Xia, Jian-Bai
Li, S. S.
Zhang, X. W.
Keywords: Electrical and Electronic Engineering
Issue Date: 2007
Source: Zhang, X. W., Fan, W., Li, S. S., & Xia, J.-B. (2007). Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots. Applied physics letters, 90(15), 153103.
Series/Report no.: Applied physics letters
Abstract: The electronic structure, electron g factor, and Stark effect of InAs1−xNx quantum dots are studied by using the ten-band k· p model. It is found that the g factor can be tuned to be zero by the shape and size of quantum dots, nitrogen N doping, and the electric field. The N doping has two effects on the g factor: the direct effect increases the g factor and the indirect effect decreases it. The Stark effect in quantum ellipsoids is high asymmetrical and the asymmetry factor may be 319.
URI: https://hdl.handle.net/10356/100822
http://hdl.handle.net/10220/18126
ISSN: 0003-6951
DOI: 10.1063/1.2721130
Rights: © 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2721130.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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