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|Title:||Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005||Authors:||Ding, K.
Ma, B. S.
Su, F. H.
Wang, W. J.
Li, G. H.
Yoon, Soon Fatt
|Keywords:||Electrical and Electronic Engineering||Issue Date:||2006||Source:||Wang, W., Su, F., Ding, K., Li, G., Yoon, S., Fan, W., Wicaksono, S., & Ma, B. (2006). Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005. Physical Review B, 74(19), 195201(6pg).||Series/Report no.:||Physical review B||Abstract:||The photoluminescence of GaAs0.973Sb0.022N0.005 was investigated at different temperatures, pressures, and excitation powers. Both the alloy band edge and the N-cluster emissions, which show different temperature and excitation power dependences, were observed. The pressure coefficients obtained in the pressure range of 0–1.4 GPa for the band edge and N-related emissions are 67 and 45 meV/GPa, respectively. The N-cluster emissions shift to higher energy in the lower pressure range and then begin to redshift at about 8.5 GPa. This redshift is possibly caused by the increase of the x-valley component in the N-related states with increasing pressure. A rapid decrease of the emission intensity of the N-related band was also observed when the pressure exceeded about 8 GPa.||URI:||https://hdl.handle.net/10356/100835
|DOI:||10.1103/PhysRevB.74.195201||Rights:||© 2006 The American Physical Society This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of The American Physical Society. The paper can be found at the following official DOI: http://dx.doi.org/10.1103/PhysRevB.74.195201. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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