Please use this identifier to cite or link to this item:
Title: Charge-induced conductance modulation of carbon nanotube field effect transistor memory devices
Authors: Chan, Mei Yin
Wei, Li
Chen, Yuan
Chan, Lap
Lee, Pooi See
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2009
Source: Chan, M. Y., Wei, L., Chen, Y., Chan, L., & Lee, P. S. (2009). Charge-induced conductance modulation of carbon nanotube field effect transistor memory devices. Carbon, 47(13), 3063-3070.
Series/Report no.: Carbon
Abstract: We effectively tailored the charge trapping and transport behavior of a carbon nanotube field effect transistor memory device using charge interaction with underlying Ge nanoparticles in a HfO2 high-κ dielectric. We also suggest a new route for modulating the Schottky barrier at the nanotube–electrode interface with localized charge trapping in discrete nanoparticles. This modification leads to an effective increase in the read-out conductance ratio of two to three orders magnitude under low voltage operation, associated with a large memory window of ∼5.3 V. Furthermore, we achieved a more controllable and reliable memory effect due to stable charge storage in deep nanoparticle traps, as compared to shallow HfO2 defect states.
ISSN: 0008-6223
DOI: 10.1016/j.carbon.2009.07.017
Rights: © 2009 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

Citations 20

Updated on Jul 13, 2020

Citations 20

Updated on Mar 6, 2021

Page view(s) 20

Updated on Dec 5, 2021

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.